ALLWIN21 ACCUTHERMO AW810M RTP  200mm Rapid Thermal Processing System. 

Date of MFG 09/2021. Very Light Use. The system uses high intensity visible radiation to heat single wafer for short process periods of time at precisely controlled temperatures. The process periods are typically 1-600 seconds in duration, although periods of up to 9999 seconds can be selected. These capabilities, combined with the heating chamber's cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.

AccuThermo AW 810 Software Key Features
o Integrated process control system
o Real time graphics display
o Real time process data acquisition, display, and analysis
o Programmed comprehensive calibration and diagnostic functions
o Closed-loop temperature control with temperature sensing.
o Precise time-temperature profiles tailored to suit specific process
requirements.
o Faster, easier Programmable comprehensive calibration of all
subsystems, leading to enhanced process results.
o A recipe editor to create and edit recipes to fully automate the
processing of wafers inside the AccuThermo RTP
o Validation of the recipe so improper control sequences will be
revealed.
o Storage of multiple recipes, process data and calibration files so that
process and calibration results can be maintained and compared over
time.
o Passwords provide security for the system, recipe editing, diagnostics,
calibration and setup functions.
o Simple and easy to use menu screen which allow a process cycle to be
easily defined and executed.
o Troubleshooting feature which allows engineers and service personnel
to activate individual subassemblies and functions. More I/O, AD/DA
“expose”.
o Use PowerSum technology to detect the process and increase Yield.
o Watchdog function: If this board looses communication with the control
software, it will shut down all processes and halt the system until
communication is restored.

AccuThermo AW 810 Specifications
+ Wafer sizes: Small pieces, 2", 3", 4", 5", 6", 8" wafer capability-------CURRENTLY CONFIGURED WITH TRAY FOR 8" SQUARES.
+ Recommended ramp up rate: Programmable, 10°C to 120°C per
second. Maximum Rate: 200°C (NOT RECOMMENDED)
+ Recommended steady state duration: 0-300 seconds per step.
+ Ramp down rate: Non-programmable, 10°C to 200°C per second.
+ Recommended steady state temperature range: 150°C - 1150°C.
Maximum 1250°C (NOT RECOMMENDED)
+ ERP Pyrometer 450-1250°C with ±1°C accuracy when calibrated against
an instrumented thermocouple wafer.
+ Thermocouple 100-800°C with ±0.5°C accuracy & rapid response.
+ Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer.
(Repetition specifications are based on a 100-wafer set.)
+ Temperature uniformity: ±8°C across an 8" (200 mm) wafer at 1150°C.
(This is a one sigma deviation 100 angstrom oxide.) For a titanium
silicide process, no more than 6% increase in non-uniformity during the
first anneal at 650°C to 700°C.
+ Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30
PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas,
NH3, N2O2 are used.---Currently configured with 2 MFC for gas inputs.

208V, 3Ph, 60Hz, 100A